| PART |
Description |
Maker |
| IRF5800 IRF5800TR IRF580003 |
Ultra Low On-Resistance, P-Channel MOSFET
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
| TPCA8014-H |
MOSFET TPC Series
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCA8004-H |
MOSFET TPC Series
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
|
TOSHIBA[Toshiba Semiconductor]
|
| IRF7702GPBF IRF7703GPBF |
HEXFETPower MOSFET Ultra Low On-Resistance 1.8V Rated
Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (1.2mm) Available in Tape & Reel Lead-Free Halogen-Free
|
International Rectifier
|
| ENA0889 MCH6438 |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Sanyo Semicon Device
SANYO SEMICONDUCTOR CO LTD
|
| 2SK3980 |
900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| CMLM0205 |
MULTI DISCRETE MODULESURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE 280 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor, Corp.
|
| STD22NM20N05 STD22NM20N STD22NM20NT4 |
N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh II MOSFET
N-CHANNEL 200V - 0.088ヘ - 22A DPAK ULTRA LOW GATE CHARGE MDmesh⑩ II MOSFET
N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh?/a> II MOSFET
|
STMicroelectronics
|
| ECH8602M |
6 A, 30 V, 0.031 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
N-Channel Silicon MOSFET
|
Sanyo Semicon Device
|
| STP30NM30N |
N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET
N-channel 300V - 0.078ヘ - 30A - TO-220 Ultra low gate charge MDmesh⑩ II Power MOSFET
|
STMicroelectronics
|
| UP04979 |
Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
